Effect of CoWP cap thickness on via yield and reliability for Cu interconnects with CoWP-only cap process

Author

Gambino, J. ; Wynne, J. ; Smith, S. ; Mongeon, S. ; Pokrinchak, P. ; Meatyard, D.

Author_Institution

IBM Microeletronics, Essex Junction, VT, USA

fYear

2005

fDate

6-8 June 2005

Firstpage

111

Lastpage

113

Abstract

Via resistance and stress migration lifetime were characterized for a CoWP-only cap process (i.e. no dielectric cap) and a CoWP+SiN cap process. For the CoWP-only process, the via resistance and stress migration lifetime depended on the CoWP thickness. In order to achieve a tightly distributed via resistance and long stress migration lifetime, the data suggests that the CoWP must be sufficiently thick to protect the Cu during the via etch and strip processes.

Keywords

cobalt compounds; copper; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit yield; silicon compounds; tungsten compounds; CoWP; Cu; SiN; cobalt tungsten phosphide cap thickness; copper interconnects; microelectronics industry; silicon nitride cap; stress migration lifetime; via etch process; via reliability; via resistance; via strip process; via yield; Capacitance; Copper; Dielectrics; Electric resistance; Integrated circuit interconnections; Microelectronics; Scanning electron microscopy; Silicon compounds; Stress; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International

Print_ISBN

0-7803-8752-X

Type

conf

DOI

10.1109/IITC.2005.1499944

Filename

1499944