DocumentCode
1839661
Title
High-speed polysilicon emitter bipolar technologies
Author
Zhang, Lichun ; Ni, Xuewen ; Wang, Yangyuan
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
1995
fDate
24-28 Oct 1995
Firstpage
768
Abstract
Summary form only given. Since the 1980´s, polysilicon emitter has become the main bipolar technology for high-speed, ultra-high-speed and BICMOS IC. In this paper, our group proposed the single polysilicon emitter structure. A set of advanced bipolar technologies such as deep-trench-isolation, ion implantation compensated collector region, polysilicon emitter, emitter-base oxidation spacer isolation, ion implantation rapid thermal annealing, and Cobalt silicide self-align are used for scaling down the devices
Keywords
bipolar integrated circuits; integrated circuit technology; silicon; Si; cobalt silicide self-align; deep trench isolation; device scaling; emitter-base oxidation spacer isolation; high-speed polysilicon emitter bipolar technologies; ion implantation compensated collector; ion implantation rapid thermal annealing; BiCMOS integrated circuits; Bipolar integrated circuits; Cobalt; High speed integrated circuits; Ion implantation; Isolation technology; Oxidation; Rapid thermal annealing; Silicides; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.503553
Filename
503553
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