Modeling high-level free carrier injection in advanced bipolar junction transistors

Author

Yue, Yongqing ; Liou, J.J. ; Ortiz-Conde, A. ; Garcia Sanchez, F.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA

fYear

1995

fDate

24-28 Oct 1995

Firstpage

769

Lastpage

771

Abstract

This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. Our results suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations

Keywords

bipolar transistors; carrier density; semiconductor device models; ambipolar transport equation; bipolar junction transistor; current transport; diffusion current; drift current; electric field; free carrier concentration; high-level injection; majority carrier current; model; quasi-neutral base; zero majority current approximation; Charge carrier density; Differential equations; Doping profiles; Electrons; Fasteners; Medical simulation; Predictive models; Semiconductor device doping; Semiconductor devices; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuit Technology, 1995 4th International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3062-5

Type

conf

DOI

10.1109/ICSICT.1995.503554

Filename

503554