DocumentCode
1840444
Title
Chemical dry cleaning technology for reliable 65 nm CMOS contact to NiSix
Author
Honda, Makoto ; Tsutsumi, Kaori ; Harakawa, Hideaki ; Nomachi, Akiko ; Murakami, Kazuhiro ; Ooya, Katsuhiko ; Kudou, Tomoyasu ; Nagamatsu, Takahito ; Ezawa, Hirokazu
Author_Institution
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear
2005
fDate
6-8 June 2005
Firstpage
194
Lastpage
196
Abstract
Nickel silicide (NiSix) is being considered as a replacement for the currently used silicides. A native oxide film on the nickel silicide surface causes high contact resistance. The cleaning technology for removal of the oxide film on NiSix is a critical issue for 65 nm generation CMOS devices. The effect of a chemical dry treatment prior to contact metallization was studied. It was confirmed that the chemical dry treatment is effective for obtaining low stable contact resistance, and is a key technology for the high yield manufacture of CMOS devices.
Keywords
CMOS integrated circuits; contact resistance; integrated circuit metallisation; surface cleaning; 65 nm; NiSix; chemical dry cleaning; contact metallization; contact resistance; high yield manufacture; nickel silicide; oxide film; reliable CMOS devices; CMOS technology; Chemical technology; Cleaning; Contact resistance; Manufacturing; Metallization; Nickel; Silicides; Surface resistance; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2005. Proceedings of the IEEE 2005 International
Print_ISBN
0-7803-8752-X
Type
conf
DOI
10.1109/IITC.2005.1499977
Filename
1499977
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