A low power SiGe HBT LNA For UWB applications

Author

Hamouda, M. ; Fischer, G. ; Weigel, R. ; Ussmueller, T.

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2012

fDate

12-14 March 2012

Firstpage

1

Lastpage

4

Abstract

A low noise amplifier (LNA) is implemented in this work for ultra wide band (UWB) localization and sensing systems within a wide frequency range starting from 400MHz and up to 10GHz. The topology used is a resistive shunt feedback and a peaking inductance in series with the output transistor to achieve the desired bandwidth and have better noise performance. The LNA is fabricated in low cost 0.25μm 92GHz f_max SiGe-HBT-BiCMOS process technology. The area of the manufactured chip is 0.73mm². The achieved gain is 12dB with a NF less than 3.7dB over the entire frequency range while the consumed power is only 14.5mW.

Keywords

BiCMOS integrated circuits; amplifiers; feedback; heterojunction bipolar transistors; ultra wideband technology; HBT-BiCMOS process technology; SiGe; UWB applications; frequency 400 MHz to 10 GHz; frequency 92 GHz; inductance peaking; low noise amplifier; low power HBT LNA; manufactured chip area; output transistor; resistive shunt feedback; size 0.25 mum; ultra wide band localization systems; ultra wide band sensing systems; Bandwidth; Impedance; Impedance matching; Linearity; Noise; Noise measurement; Transistors; Low power; SiGe HBT; low noise amplifier; noise figure; ultra wide band (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2012 The 7th German

Conference_Location

Ilmenau

Print_ISBN

978-1-4577-2096-3

Electronic_ISBN

978-3-9812668-4-9

Type

conf

Filename

6185167