A 900 MHz voltage-mode class-S power amplifier

Author

Al-Mozani, Dhamia ; Wentzel, Andreas ; Meliani, Chafik ; Heinrich, Wolfgang

Author_Institution

Ferdinand-Braun Inst. (FBH), Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

2012

fDate

12-14 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a class-S power amplifier with voltage-mode class-D topology for the 900 MHz band. The design is based on a GaN-HEMT MMIC and realized as a hybrid module. For a typical 3.6 Gbps single-tone BPDSM input signal, the measured output power exceeds 1 W with an efficiency of 21%. In order to study the impact of coding efficiency, a periodic square-wave input signal was investigated as well. In this case, output power increases to 3 W. Efficiency rises to 43 % peaking at 59% for an output power of 0.8 W. For the voltage-mode version, these are the highest class-S output-power values in the 900 MHz band reported so far.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; power amplifiers; semiconductor device models; wide band gap semiconductors; GaN; GaN-HEMT MMIC; class-S power amplifier; coding efficiency; frequency 900 MHz; hybrid module; periodic square-wave input signal; power 0.8 W; single-tone BPDSM input signal; voltage-mode class-D topology; Band pass filters; Gallium nitride; MMICs; Power amplifiers; Power generation; Switches; Transistors; GaN; HEMT; band-pass delta-sigma modulation; band-pass filter; class-S; power amplifier; voltage mode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2012 The 7th German

Conference_Location

Ilmenau

Print_ISBN

978-1-4577-2096-3

Electronic_ISBN

978-3-9812668-4-9

Type

conf

Filename

6185171