GaAs HBT operating as integrated V- to W-band Gunn oscillator

Author

Rudolph, M. ; Doerner, Ralf ; Heymann, P.

Author_Institution

Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1737

Abstract

Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond f/sub max/ as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.

Keywords

Gunn oscillators; III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; gallium arsenide; integrated circuit noise; millimetre wave oscillators; phase noise; 0.3 mW; 40 to 80 GHz; 62 GHz; GaAs; GaAs HBT oscillators; MMIC oscillators; MMIC-compatible two-port transferred-electron devices; V-band Gunn oscillator; W-band Gunn oscillator; collector region Gunn effect; collector voltage; maximum output power; oscillation frequency tuning; phase noise; subharmonic injection; Circuits; Frequency; Gallium arsenide; Gunn devices; Heterojunction bipolar transistors; Injection-locked oscillators; MMICs; Microwave oscillators; Power generation; Radar;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012196

Filename

1012196