A 36 W CW AlGaN/GaN-power HEMT using surface-charge-controlled structure

Author

Kikkawa, T. ; Nagahara, M. ; Kimura, T. ; Yokokawa, S. ; Kato, S. ; Yokoyama, M. ; Tateno, Y. ; Horino, K. ; Domen, K. ; Yamaguchi, Y. ; Hara, N. ; Joshin, K.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

Volume

3

fYear

2002

fDate

2-7 June 2002

Firstpage

1815

Abstract

We describe high power 36 W CW operation at 30 V using AlGaN/GaN HEMTs on SiC. Surface-charge-controlled structure, consisting of n-type doped thin GaN cap layer on AlGaN/GaN HEMT structure, is used to obtain high gate-drain breakdown voltage and to reduce current collapse. By optimizing threshold voltage of this structure, we obtained a maximum drain current of 1 A/mm and a gate-drain breakdown voltage over 200 V. A 24-mm-wide-gate chip showed output power of 45.6 dBm (36 W) at 2.2 GHz with a liner gain of 9.7 dB.

Keywords

III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device breakdown; wide band gap semiconductors; 2.2 GHz; 200 V; 24 mm; 30 V; 36 W; AlGaN-GaN; AlGaN/GaN; CW operation; SiC; current collapse; drain current; gate-drain breakdown voltage; liner gain; microwave power applications; n-type doped thin cap layer; output power; power HEMT; surface-charge controlled structure; threshold voltage; Aluminum gallium nitride; Electrodes; Gallium nitride; HEMTs; Laboratories; Power generation; Pulse measurements; Silicon carbide; Silicon compounds; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2002 IEEE MTT-S International

Conference_Location

Seattle, WA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7239-5

Type

conf

DOI

10.1109/MWSYM.2002.1012215

Filename

1012215