Fast switching gigabit/s CMOS burst-mode transmitter for PON applications

Author

Li, Day-Uei ; Tsai, Chia-Ming ; Li-Ren Huang

Author_Institution

Ind. Technol. Res. Inst., STC, Hsinchu, Taiwan

fYear

2005

fDate

27-29 April 2005

Firstpage

257

Lastpage

260

Abstract

A burst-mode transmitter with automatic power control which is capable of waveform shaping, fast laser on/off switching, and driving over 60mA modulation current is presented in this paper. It is constructed by a driver which was fabricated in 0.25μm 1P5M CMOS process with a 2.5-Gb/s 1310nm-wavelength Fabry-Perot laser diode. Measurements show clear eye diagrams operating over 2.5-Gb/s data rate with 84/97ps rise/fall times. The turn on/off delay of modulation current is less than 6ns. And the laser turn on/off time is about 30/20ns which is applicable for EPON or even GPON applications.

Keywords

CMOS integrated circuits; driver circuits; low-power electronics; network synthesis; optical transmitters; passive networks; power integrated circuits; semiconductor lasers; switching circuits; 0.25 micron; 1310 nm; 2.5 Gbit/s; 84 ps; 97 ps; EPON; Fabry-Perol laser diode; GPON; PON; automatic power control; eye diagrams; fast switching CMOS burst-mode transmitter; waveform shaping; Bit rate; Driver circuits; EPON; Laser modes; Laser noise; Optical network units; Optical receivers; Optical transmitters; Passive optical networks; Power lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on

Print_ISBN

0-7803-9060-1

Type

conf

DOI

10.1109/VDAT.2005.1500069

Filename

1500069