• DocumentCode
    1842733
  • Title

    10-Gb/s SiGe modulator drivers with 4.5 Vpp output swing

  • Author

    Li, Day-Uei ; Tsai, Chia-Ming ; Huang, Li-Ren

  • Author_Institution
    Ind. Technol. Res. Inst., SoC Technol. Center, Hsinchu, Taiwan
  • fYear
    2005
  • fDate
    27-29 April 2005
  • Firstpage
    261
  • Lastpage
    262
  • Abstract
    This paper presents 10-Gb/s modulator drivers employing novel cascode configuration with double output swing. The cascode drivers in 0.35μm SiGe BiCMOS technology exhibit high output swing of 4.5 Vpp. It is the highest value among reported silicon-based drivers.
  • Keywords
    BiCMOS analogue integrated circuits; Ge-Si alloys; driver circuits; integrated circuit design; 0.35 micron; 10 Gbit/s; 4.5 V; BiCMOS technology; SiGe; SiGe modulator drivers; cascode configuration; cascode drivers; double output swing; silicon-based drivers; Bandwidth; BiCMOS integrated circuits; Bipolar transistors; Driver circuits; Feedback circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Silicon germanium; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Design, Automation and Test, 2005. (VLSI-TSA-DAT). 2005 IEEE VLSI-TSA International Symposium on
  • Print_ISBN
    0-7803-9060-1
  • Type

    conf

  • DOI
    10.1109/VDAT.2005.1500070
  • Filename
    1500070
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1842733