• DocumentCode
    1844852
  • Title

    Characteristics of ALD-TaN thin films using a novel precursors for copper metallization

  • Author

    Kyung In Choi ; Byung Hee Kim ; Sang Woo Lee ; Jong Myeong Lee

  • Author_Institution
    Semicond. R&D, Samsung Electron. Co. Ltd., Kyungki, South Korea
  • fYear
    2003
  • fDate
    2-4 June 2003
  • Firstpage
    129
  • Lastpage
    131
  • Abstract
    ALD-TaN thin films derived from tert-buthyIimidotrisdiethyl-amidotantalum (TBTDET) and tert-amylimidotrisdim-ethylamidotantalum (TAIMATA) precursors for the diffusion barrier in Cu interconnects were developed. The deposition rate of the ALD-TaN process was saturated at 0.4 Å /cycle in a temperature range between 200°C and 250°C with TBTDET and at 0.2 Å/cycle in a temperature range between 150°C and 200°C with TAIMATA. Both precursors provided roughly comparable film properties such as not only excellent conformality but also composition and structure characterized by XPS and XRD, respectively. ALD-TaN films obtained from above precursors yield low via resistance in aluminum interconnects. However, relatively high via resistance was resulted upon Cu integration as compared to PVD-TaN and Al metallization. The superior diffusion barrier characteristic on Cu metallization was observed with ALD-TaN by BTS result in comparison to the conventional PVD-TaN.
  • Keywords
    X-ray diffraction; X-ray photoelectron spectra; atomic layer deposition; copper; diffusion barriers; integrated circuit metallisation; tantalum compounds; thin films; 150 to 250 degC; ALD-TaN thin films; Cu; Cu integration; Cu interconnects; TaN; XPS; XRD; aluminum interconnects; copper metallization; deposition rate; superior diffusion barrier; Artificial intelligence; Copper; Integrated circuit interconnections; Metallization; Semiconductor thin films; Sputtering; Temperature dependence; Temperature distribution; Transistors; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2003. Proceedings of the IEEE 2003 International
  • Print_ISBN
    0-7803-7797-4
  • Type

    conf

  • DOI
    10.1109/IITC.2003.1219732
  • Filename
    1219732