mm-Wave CMOS Colpitts VCO & Frequency divider for the 60GHz WPAN

Author

Kim, Ki-Jin ; Lim, Tae-Ho ; Park, Hyun-chul ; Ahn, K.H.

Author_Institution

Hybrid Signal Process. Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea

fYear

2009

fDate

15-17 Dec. 2009

Firstpage

358

Lastpage

361

Abstract

A mm-wave CMOS Colpitts VCO and Frequency divider for the 60GHz WPAN fabricated with the 90nm TSMC Process is presented. The VCO is composed of a NMOS transistor-pair as a core circuit and 3 bit capacitor array for enhancement of the oscillation bandwidth. A mm-wave frequency divider is designed based on CML divider driven by colpitts´s high voltage swing. The proposed VCO can operate at 28~34GHz and the phase noise at 1MHz offset is -112dBc/Hz. The operating range of the suggested CML divider is 20~46GHz when the driving voltage amplitude is 400mV. The power consumption of the VCO & divider including all the buffers is 30mW. Comparing to previous works, the proposed VCO & divider have the widest bandwidth at mm-wave frequency.

Keywords

CMOS integrated circuits; frequency dividers; millimetre wave oscillators; radio access networks; voltage-controlled oscillators; NMOS transistor-pair; TSMC process; WPAN; capacitor array; core circuit; frequency 60 GHz; frequency divider; millimeter wave CMOS Colpitts VCO; oscillation bandwidth; power 30 mW; size 90 nm; storage capacity 3 bit; voltage 400 mV; Bandwidth; CMOS process; Capacitors; Circuits; Energy consumption; Frequency conversion; MOSFETs; Phase noise; Voltage; Voltage-controlled oscillators; 60 GHz WPAN; mm-Wave VCO; mm-Wave frequency divider;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications (MICC), 2009 IEEE 9th Malaysia International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-5531-7

Type

conf

DOI

10.1109/MICC.2009.5431530

Filename

5431530