• DocumentCode
    1847921
  • Title

    A power semiconductor diode with an integrated forward-current sensor

  • Author

    Manduteanu, G.V.

  • Author_Institution
    S.C. Baneasa SA, Bucharest
  • fYear
    1993
  • fDate
    7-11 Mar 1993
  • Firstpage
    357
  • Lastpage
    359
  • Abstract
    A new type of power semiconductor device, i.e., a power semiconductor diode with an integrated forward-current sensor, is introduced. An integrator resistor is obtained, permitting the monitoring of the forward current of the diode. The dependence of the voltage on said resistor versus the forward-current is linear in the range of the limiting on-state current of the power diode, I FAV, to six times IFAV. The theoretical model proposed matches experimental results within 10% accuracy
  • Keywords
    electric current measurement; electric sensing devices; power electronics; semiconductor device models; semiconductor device testing; semiconductor diodes; accuracy; forward-current sensor; integrator resistor; model; monitoring; on-state current; power semiconductor diode; voltage; Cathodes; Current measurement; Frequency measurement; Geometry; Power measurement; Pulse measurements; Resistors; Semiconductor diodes; Sensor phenomena and characterization; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-0983-9
  • Type

    conf

  • DOI
    10.1109/APEC.1993.290685
  • Filename
    290685
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1847921