An improved passive lossless turn-on and turn-off snubber

Author

He, Xiangning ; Finney, S.J. ; Williams, B.W. ; Green, T.C.

Author_Institution

Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK

fYear

1993

fDate

7-11 Mar 1993

Firstpage

385

Lastpage

392

Abstract

An improved passive lossless turn on/off snubber is proposed, where energy trapped in the snubber is transferred to both the DC rail and the load. A wider operational range of load current, a higher switching frequency and lower peak switch current make this circuit more practical than conventional lossless snubbers. Design equations, simulations based on a simplified insulated gate bipolar transistor (IGBT) model and practical results are given

Keywords

energy storage; insulated gate bipolar transistors; load (electric); overcurrent protection; power convertors; power transistors; semiconductor device models; switching circuits; DC rail; IGBT; design; energy storage; insulated gate bipolar transistor; load; load current; model; operational range; overcurrent protection; passive lossless turn on/off snubber; peak switch current; power transistors; simulations; switching frequency; Capacitance; Circuit simulation; Equations; Frequency; Inductance; Rails; Resistors; Snubbers; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1993. APEC '93. Conference Proceedings 1993., Eighth Annual

Conference_Location

San Diego, CA

Print_ISBN

0-7803-0983-9

Type

conf

DOI

10.1109/APEC.1993.290689

Filename

290689