DocumentCode
1849895
Title
Sealed-off pseudospark switches for pulsed power
Author
Frank, K. ; Bickes, C. ; Ernst, U. ; Iberler, M. ; Meier, J. ; Prucker, U. ; Schlaug, M. ; Schwab, J. ; Urban, J. ; Hoffmann, D.H.H.
Author_Institution
Dept. of Phys., Erlangen-Nurnberg Univ., Germany
Volume
1
fYear
1997
fDate
June 29 1997-July 2 1997
Firstpage
299
Abstract
There has been a considerable progress in understanding the physics and technology of high power pseudospark switches, which allows their implementation in pulsed power applications. These switches have very wide dynamic range of breakdown voltage operation: from 1% to 99%. Single-gap systems still have the disadvantage of small hold-off voltage, which is lower than 25 kV and which requires the construction of two-stage systems. In this way, a more reliable hold-off voltage as high as 30 kV would be achieved. Based upon a better understanding of fundamental discharge processes, it is possible to suppress the quenching phenomenon. This might prove helpful in some pulsed power applications. Semiconductor electrode materials are the best choice for devices with considerably reduced electrode erosion and prevention from statistically distributed drop of impedance. The feasibility of a durable composite of semiconductor and metallic bath electrode will facilitate tremendously the construction of sealed-off pseudospark switches for pulsed power applications, especially to replace ignitron and spark gaps. Up to now, the tested prototypes operate with hold-off voltages up to 20 kV, peak currents up to 150 kA and pulse length up to 20 /spl mu/s. Tests with longer pulse length are planned in order to extend the commercial applicability of these devices.
Keywords
circuit-breaking arcs; electrodes; power supplies to apparatus; pulse generators; pulsed power switches; sparks; switchgear testing; 150 kA; 20 kV; 20 mus; 30 kV; dynamic breakdown voltage range; electrode erosion; fundamental discharge processes; hold-off voltage; peak currents; pulse length; pulsed power applications; quenching phenomenon suppression; sealed-off pseudospark switches; semiconductor electrode materials; statistically distributed impedance drop; switch testing; Dynamic range; Electrodes; Impedance; Physics; Power semiconductor switches; Power system reliability; Semiconductor materials; Spark gaps; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 1997. Digest of Technical Papers. 1997 11th IEEE International
Conference_Location
Baltimore, MA, USA
Print_ISBN
0-7803-4213-5
Type
conf
DOI
10.1109/PPC.1997.679339
Filename
679339
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