Isothermal Non-Linear Device Characterization

Author

Cuoco, V. ; de Kok, M. ; Heijden, M.P.v.d. ; de Vreede, L.C.N.

Author_Institution

department of Information, Technology and Systems, Laboratory of ECTM, DIMES, Delft University of Technology, P.O. Box 5053, 2600 GB Delft, The Netherlands. Phone: +31-15-2786468, Fax: +31-15-2622163, E-mail: V.Cuoco@ITS.TUDelft.nl

Volume

40

fYear

2001

fDate

Nov. 2001

Firstpage

1

Lastpage

4

Abstract

Semiconductor device characterization is traditionally focused on the measurement of the DC and AC characteristics. In view of this, there is a lack of characterization methods supporting the overall qualification of the device (non-) linearity for various bias conditions. One way to study the device linearity is to create constant OIP3 contours in the I(V) output plane. Using this data representation, insight is gained about the device linearity under various bias conditions. This is useful in circuit design, as well as for model verification. In order to avoid thermal effects, this type of data is preferably measured under isothermal (pulsed) conditions. Based on these considerations we have developed a nonlinear RF characterization system for the isothermal measurement of spectral components. In this work we give an overview of the measurement system setup together with some initial results.

Keywords

Current measurement; Distortion measurement; Isothermal processes; Linearity; Pulse measurements; Qualifications; Radio frequency; Semiconductor devices; Spectral analysis; Synthesizers; Self-heating effects; model verification; pulsed distortion measurements; third order intercept point;

fLanguage

English

Publisher

ieee

Conference_Titel

ARFTG Conference Digest-Fall, 58th

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5686-1

Type

conf

DOI

10.1109/ARFTG.2001.327493

Filename

4120196