DocumentCode
1853515
Title
Characterization of hydrogenated amorphous silicon thin-film solar cell defects using optical beam induced current imaging and focused ion beam cross-sectioning technique
Author
Meng, L. ; Steen, S. ; Koo, C.K. ; Bhatia, C.S. ; Street, A.G. ; Joshi, P. ; Kim, Y.H. ; Phang, J.C.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
fYear
2011
fDate
19-24 June 2011
Abstract
Defects in hydrogenated amorphous silicon (a-Si:H) thin-film solar cells were localized by optical beam induced current (OBIC) imaging and then characterized using focused ion beam (FIB) cross-sectioning technique. It was found that nano-voids in the active silicon layer and transparent conductive oxide underneath the back electrode were the main causes of OBIC signal reduction.
Keywords
amorphous semiconductors; crystal defects; elemental semiconductors; focused ion beam technology; semiconductor thin films; silicon; solar cells; back electrode; focused ion beam cross-sectioning technique; hydrogenated amorphous silicon thin-film solar cell defects; nanovoids; optical beam induced current imaging; transparent conductive oxide; Contacts; Image edge detection; Imaging; Ion beams; Performance evaluation; Photovoltaic cells; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6185850
Filename
6185850
Link To Document