Direct imaging of electron transport within a quantum point contact

Author

da Cunha, Carlo R. ; Aoki, Naokazu ; Ferry, David K. ; Ochiai, Yuya

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2005

fDate

11-15 July 2005

Firstpage

754

Abstract

Much attention has been given to sub-1G₀ (=2e²/h) features in the transmission curve of a quantum point contact (e.g.: 0.5G₀, 0.7G₀). Explanations for this phenomenon have been attributed to many-body interactions such as the Kondo effect or the formation of spin polarized currents. We have used scanning gate microscopy to directly observe the local features of the transport associated with sub-1G₀ structures. Images taken with this technique reveal striking features such as weak localization induced within the constriction as well as the formation of self-consistent potentials in the QPC.

Keywords

III-V semiconductors; Kondo effect; gallium arsenide; indium compounds; quantum point contacts; scanning probe microscopy; semiconductor quantum wells; spin polarised transport; weak localisation; InGaAs; Kondo effect; direct imaging; electron transport; quantum point contact; scanning gate microscopy; spin polarized currents; weak localization; Contacts; Electrons; Etching; Indium gallium arsenide; Mechanical engineering; Microscopy; Particle scattering; Probes; Quantum dots; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500640

Filename

1500640