Pressure dependent synthesis of CuInSe2 thin film solar cells from electrodeposited binary selenide stacks

Author

Fischer, Johannes ; Larsen, Jes ; Lambrechts, Jean-Christophe ; Siebentritt, Susanne ; Dale, Phillip J.

Author_Institution

Univ. du Luxembourg, Belvaux, Luxembourg

fYear

2011

fDate

19-24 June 2011

Abstract

CuInSe₂ absorber films were fabricated by annealing electrodeposited stacks of copper selenide on indium selenide. The inert background gas pressure during annealing was varied and the absorber composition, grain size and structure characterized. X-ray diffraction verified the formation of CuInSe₂. Compared to one-step electrodeposited CuInSe₂ precursors the absorbers obtained from binary selenide precursors show larger grain size and improved crystal quality. Grain size increases further with higher annealing pressure and electronic quality improves as can be seen from an exciton transition in photoluminescence. Completed devices showed a best efficiency of 5.0%.

Keywords

X-ray diffraction; annealing; electrodeposition; photoluminescence; solar cells; thin films; CuInSe₂; X-ray diffraction; XRD; absorber composition; absorber films; annealing pressure; efficiency 5.0 percent; electrodeposited binary selenide stacks; electronic quality; exciton transition; grain size; improved crystal quality; inert background gas pressure; one-step electrodeposited precursors; photoluminescence; pressure dependent synthesis; thin film solar cells; Annealing; Atmosphere; Copper; Films; Grain size; Photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6185968

Filename

6185968