A 24GHz SiGe DPST Switch with 30dB Gain Control for Multi-Channel Receiver Integrated Circuits

Author

Gresham, Ian

Author_Institution

Tyco Electron. Wireless Syst., Lowell, MA

fYear

2008

fDate

28-28 Feb. 2008

Firstpage

1

Lastpage

7

Abstract

An active double-pole single-throw (DPST) switch operating at 24 GHz is described that incorporates a voltage variable attenuator to reduce the signal power level at the switch output terminals. The switch is fabricated in a 0.5 um SiGe bipolar process as an integral component in a dual-channel downconverter for UWB applications. The channel isolation is measured (on-chip and packaged) to be greater than 35 dB. The switch circuit consumes 25 mA from a +5 V supply and occupies an area of 0.36 mm². The attenuator allows for approximately 30 dB of small-signal gain control of the downconverter with a control voltage range of 0.5 V to 3.5 V.

Keywords

Ge-Si alloys; MMIC; attenuators; gain control; microwave receivers; microwave switches; ultra wideband communication; DPST switch; SiGe; UWB applications; bipolar process; channel isolation; current 25 mA; double-pole single-throw switch; dual-channel downconverter; frequency 24 GHz; gain control; multichannel receiver integrated circuits; size 0.5 mum; voltage 0.5 V to 3.5 V; voltage 5 V; voltage variable attenuator; Attenuator; Downconverter; Integrated Circuit; Multi-Channel; SiGe; Switch;

fLanguage

English

Publisher

iet

Conference_Titel

RF and Microwave IC Design, 2008 IET Seminar on

Conference_Location

London

ISSN

0537-9989

Print_ISBN

978-0-86341-896-9

Type

conf

Filename

4542569