Increase sensitivity of the sensor based on bipolar magnetotransistor by minimization initial output offset

Author

Tikhonov, R.D. ; Kozlov, A.V. ; Chernova, Yu.A. ; Polomoshnov, S.A.

Author_Institution

SMC Technol. Centre MIET, Zelenograd

fYear

2009

fDate

27-28 March 2009

Firstpage

216

Lastpage

221

Abstract

In this article represent the experimental investigation of initial offset voltage between collectors in the integrated circuit including dual-collector lateral npn-type bipolar magnetotransistor in a p-well with polysilicon resistors. Choice of magnetotransistor circuit defines an operating mode and its influence on the offset. Initial offset between collectors voltage is reduced to value less than 1 mV that allows to increase relative useful output signal for a weak magnetic field.

Keywords

bipolar transistors; integrated circuits; magnetic sensors; magnetoresistive devices; resistors; dual-collector lateral npn-type bipolar magnetotransistor; integrated circuit; magnetotransistor circuit; minimization initial output offset; polysilicon resistors; sensor; Communication system control; Current supplies; Impurities; Magnetic circuits; Magnetic sensors; Minimization; Resistors; Silicon; Sliding mode control; Voltage control; Bipolar magnetotransistor; initial offset voltage; the integrated sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2009. SIBCON 2009. International Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

978-1-4244-2007-0

Type

conf

DOI

10.1109/SIBCON.2009.5044859

Filename

5044859