• DocumentCode
    1857667
  • Title

    Indium arsenide (InAs) single and dual quantum-well heterostructure FinFETs

  • Author

    Thathachary, Arun V. ; Agrawal, N. ; Bhuwalka, K.K. ; Cantoro, M. ; Heo, Y.-C. ; Lavallee, G. ; Maeda, S. ; Datta, S.

  • Author_Institution
    Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2015
  • fDate
    16-18 June 2015
  • Abstract
    This work presents experimental demonstration of InAs single and dual quantum well (DQW) heterostructure FinFETs (FF) and their superior performance over In0.7Ga0.3As QW FF. Peak mobility of 3,531 cm2/V-sec and 3,950 cm2/V-sec are obtained for InAs single QW FF and InAs DQW FF, respectively, at a fin width (Wfin) of 40nm and LG = 2μm. Peak gm of 480 μS/μm, 541 μS/um; IDSAT of 121 μA/μm, 135 μA/μm; and SSSAT of 101 mV/dec,103 mV/dec is demonstrated for single and DQW FF, respectively, at LG=300nm (VD = 0.5V, IOFF=100 nA/μm). Finally, InAs DQW is shown to be a viable alternate channel for high aspect ratio n-channel FinFET.
  • Keywords
    III-V semiconductors; MOSFET; gallium arsenide; indium compounds; quantum well devices; DQW FF; In0.7Ga0.3As; InAs; dual quantum-well heterostructure FinFET; size 40 nm; FinFETs; III-V semiconductor materials; Indium phosphide; Logic gates; Silicon; Substrates; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSI Technology), 2015 Symposium on
  • Conference_Location
    Kyoto
  • ISSN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2015.7223677
  • Filename
    7223677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1857667