Effects in GaN films grown by MOVPE on GaAs due to the distance of heat source

Author

Vilchis, H. ; Sanchez, V.M. ; Escobosa, A.

Author_Institution

Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City

fYear

2008

fDate

28-30 April 2008

Firstpage

1

Lastpage

3

Abstract

We are reporting the results of an investigation about of the effects in gallium nitride films, grown on gallium arsenide (001) substrates by metalorganic vapour-phase epitaxy, due to the distance of the heat source, which is through quartz infrared lamps. The films were characterized using X- ray diffraction (XRD) and photoluminescence (PL). The results suggest that the heat source distance is a very important parameter that influence in the orientation, morphology and luminescence of the gallium nitride films.

Keywords

III-V semiconductors; X-ray diffraction; gallium arsenide; photoluminescence; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; GaAs; GaN; GaN films; MOVPE; X-ray diffraction; heat source; metalorganic vapour-phase epitaxy; photoluminescence; Diffraction; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Infrared heating; Lamps; Substrates; X-ray scattering; Gallium nitride films; metalorganic vapor-phase epitaxy; quartz infrared lamps;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 2008. ICCDCS 2008. 7th International Caribbean Conference on

Conference_Location

Cancun

Print_ISBN

978-1-4244-1956-2

Electronic_ISBN

978-1-4244-1957-9

Type

conf

DOI

10.1109/ICCDCS.2008.4542639

Filename

4542639