A Row Chain Cell Array structure and current sense amplifier for PoRAM

Polymer Random Access Memory (PoRAM) is a nonvolatile memory device that Au, N, Cs and etc trapping charges are inserted into polymer material. The cell array structure it is hard to read data correctly because of current interference between cells. In this paper, to compensate for these problems, a new cell array called ´Row Chain Cell Array´ is suggested that does not have current interference. Furthermore, to read data, a current sense amplifier is more efficient and faster than the previous voltage sense amplifier due to low input impedance and low RC delay. We are verified by simulation.