• DocumentCode
    1858381
  • Title

    Self-assembled In0.22Ga0.78As quantum dots grown on GaAs/Ge/SixGe1-x/Si substrate

  • Author

    Hsieh, Y.C. ; Luo, G.L. ; Biswas, Dhrubes ; Chang, E.Y.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2005
  • fDate
    11-15 July 2005
  • Firstpage
    414
  • Abstract
    Self-assembled In0.22Ga0.78As quantum dots (QDs) fabricated on Si substrate with Ge buffer by metal organic vapor phase epitaxy (MOVPE) were investigated. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) images were used to observe the size and distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs density and distribution was investigated. For QDs grown at 430 °C, the density of the In0.22Ga0.78As dots was estimated to be 1×1011 cm-2 and the In0.22Ga0.78As QDs thickness was 5 monolayer thick.
  • Keywords
    III-V semiconductors; MOCVD; atomic force microscopy; gallium arsenide; indium compounds; self-assembly; semiconductor growth; semiconductor quantum dots; transmission electron microscopy; vapour phase epitaxial growth; 430 C; AFM; GaAs-Ge-SixGe1-x-Si; Ge buffer; In0.22Ga0.78As; Si substrate; TEM; atomic force microscopy; metal organic vapor phase epitaxy; self-assembled quantum dots; transmission electron microscopy; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Epitaxial layers; Gallium arsenide; Germanium silicon alloys; Quantum dots; Silicon germanium; Substrates; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology, 2005. 5th IEEE Conference on
  • Print_ISBN
    0-7803-9199-3
  • Type

    conf

  • DOI
    10.1109/NANO.2005.1500785
  • Filename
    1500785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1858381