DocumentCode
1858495
Title
Aero-acoustic microphone with layer-transferred single-crystal silicon piezoresistors
Author
Zhou, Z.J. ; Rufer, L. ; Wong, M.
Author_Institution
Hong Kong Univ. of Sci. & Technol., Hong Kong, China
fYear
2009
fDate
21-25 June 2009
Firstpage
1916
Lastpage
1919
Abstract
The modeling, construction and characterization of a piezoresistive areo-acoustic microphone are reported. The piezoresistors are fabricated on single-crystal silicon that has been transferred to a deposited low-stress silicon nitride sensing diaphragm. The measured resonance frequency and sensitivity are 520 kHz and 0.6 muV/V/Pa, respectively.
Keywords
aeroacoustics; microphones; piezoresistive devices; resistors; aero-acoustic microphone; layer-transferred single-crystal silicon piezoresistors; low-stress silicon nitride sensing diaphragm; piezoresistors; resonance frequency; sensitivity; Acoustic measurements; Bandwidth; Effective mass; Etching; Microphones; Piezoresistance; Piezoresistive devices; Residual stresses; Silicon; Substrates; Aero-acoustic; Layer-transfer; MEMS microphone; Piezoresistor; smart-cut;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285693
Filename
5285693
Link To Document