Ballistic quantum transport in nano-scale Schottky barrier tunnel transistors

Author

Ahn, Chiyui ; Shin, Mincheol

Author_Institution

Inf. & Commun. Univ., Daejeon, South Korea

fYear

2005

fDate

11-15 July 2005

Firstpage

553

Abstract

Nanoscale Schottky barrier tunnel transistors (SBTTs) are investigated by solving the two-dimensional Poisson equation self-consistently with ballistic quantum transport equations. We have analyzed the device characteristics of SBTT by varying the device parameters such as the channel length, tunnel barrier height, and gate insulator dielectric constant. We have found that on-current is almost independent of the channel length while off-current drastically increases as the channel length becomes shorter than around 15 nm. Discussions on avoiding such large off-current are presented, in terms of adjusting the Schottky barrier height and using a gate insulator with high dielectric constant.

Keywords

Poisson equation; Schottky gate field effect transistors; ballistic transport; nanoelectronics; permittivity; semiconductor device models; tunnel transistors; Schottky barrier height; ballistic quantum transport; channel length; device characteristics; device parameters; dielectric constant; gate insulator; gate insulator dielectric constant; nanoscale Schottky barrier tunnel transistors; off-current; on-current; tunnel barrier height; two-dimensional Poisson equation; Dielectric constant; Dielectrics and electrical insulation; Electrons; FETs; Fluctuations; MOSFETs; Nanoscale devices; Poisson equations; Schottky barriers; Silicon on insulator technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500824

Filename

1500824