Patterning nanoscale resist features on topography substrates using the 2-step NERIME FIB TSI process

Author

Gilmartin, S.F. ; Arshak, K.I. ; Collins, D. ; Korostynska, O. ; Arshak, A. ; Mihov, M.

Author_Institution

Analog Devices, Limerick, Ireland

fYear

2005

fDate

11-15 July 2005

Firstpage

709

Abstract

The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process was previously reported as a suitable technique for patterning nanometer scale features in DNQ/novolak based resists, on a range of planar substrate materials. We demonstrate, for the first time, 90 nm resist features patterned using Shipley SPR6600 resist and the 2-step NERIME process over substrate topography. The resultant resist features exhibit excellent profile control across topography, and demonstrate the suitability of the 2-step NERIME process as a nanolithography technique for applications requiring nanometer resist critical dimension (CD) and profile control over substrate topography.

Keywords

focused ion beam technology; ion beam lithography; nanolithography; nanopatterning; resists; semiconductor device manufacture; sputter etching; surface topography; 2-step NERIME FIB TSI process; 2-step negative resist image; 90 nm; DNQ/novolak based resists; Shipley SPR6600 resist; dry etching; focused ion beam top surface imaging process; ion beam lithography; nanolithography technique; nanometer resist critical dimension; patterning nanoscale resist; planar substrate materials; profile control; semiconductor device fabrication; topography substrates; Electron beams; Etching; Integrated circuit technology; Ion beams; Lithography; Optical scattering; Plasma applications; Resists; Substrates; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology, 2005. 5th IEEE Conference on

Print_ISBN

0-7803-9199-3

Type

conf

DOI

10.1109/NANO.2005.1500864

Filename

1500864