Performance improvement of CIGS solar cells with CBD-ZnS buffer layers by light soaking and rapid thermal annealing

Author

Chien, Chih-Yu ; Chen, Chia-Hsiang ; Tsai, Chih-Pin ; Shieh, Jia-Min ; Hsiao, Yu-Jen ; Lai, Chih-Huang

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2011

fDate

19-24 June 2011

Abstract

Cadmium-free Cu(In, Ga)Se₂ (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of current-voltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases V_OC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance.

Keywords

buffer layers; copper compounds; gallium compounds; rapid thermal annealing; solar cells; sputter deposition; zinc compounds; CBD buffer layers; CIGS solar cells; CuGaSe₂; CuInSe₂; DC sputtering deposition; J-V performance; RF sputtering deposition; RTA treatment; ZnS; chemical bath deposition; current-voltage performance; light soaking; rapid thermal annealing; Buffer layers; Frequency measurement; Performance evaluation; Photovoltaic cells; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186185

Filename

6186185