Optimization of Horizontal Current Bipolar Transistor (HCBT) technology parameters for linearity in RF mixer

Author

Suligoj, Tomislav ; Koricic, Marko ; Zilak, Josip ; Mochizuki, Hidehiko ; Morita, S. ; Shinomura, K. ; Imai, H.

Author_Institution

Dept. of Electron., Univ. of Zagreb, Zagreb, Croatia

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

13

Lastpage

16

Abstract

Double-balanced active mixer based on a Gilbert cell is designed and fabricated as the first RF circuit in Horizontal Current Bipolar Transistor (HCBT) technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of -5 dB are achieved. Three different HCBT structures are used in a mixer design to examine the effect of process parameters on mixer linearity. The main effect on the linearity has the n-collector doping profile since it governs the onset of Kirk effect. The improvement of 6 dB in IIP3 can be achieved by using the optimum HCBT structure, if switching quad transistors operate at or near the high current region. The circuit model parameters of three HCBT structures are extracted, accurately reproducing the measured device and circuit data.

Keywords

BiCMOS integrated circuits; bipolar transistors; mixers (circuits); optimisation; Gilbert cell; HCBT technology parameters; RF mixer; circuit model parameters; current 9.2 mA; double balanced active mixer; horizontal current bipolar transistor; mixer design; switching quad transistors; Bipolar transistors; Current measurement; Gain; Integrated circuit modeling; Linearity; Mixers; Transistors; BiCMOS integrated circuits; Bipolar transistors; HF radio communication; Horizontal Current Bipolar Transistor; Linearity; Mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798133

Filename

6798133