• DocumentCode
    1861852
  • Title

    OxID: On-chip one-time random ID generation using oxide breakdown

  • Author

    Liu, Nurrachman ; Hanson, Scott ; Sylvester, Dennis ; Blaauw, David

  • Author_Institution
    Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2010
  • fDate
    16-18 June 2010
  • Firstpage
    231
  • Lastpage
    232
  • Abstract
    A new chip ID generation method is presented that leverages the random and permanent characteristics of oxide breakdown. A 128b ID array is implemented in 65nm CMOS and two algorithms for stressing the oxides are presented, showing a near-ideal Hamming distance of 63.92 in silicon measurements and consistent IDs across voltage and temperature.
  • Keywords
    microprocessor chips; ID array; OxID; chip ID generation method; near-ideal Hamming distance; on-chip one-time random ID generation; oxide breakdown; Electric breakdown; Hamming distance; Power measurement; Stress; Temperature measurement; Transistors; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSIC), 2010 IEEE Symposium on
  • Conference_Location
    Honolulu, HI
  • Print_ISBN
    978-1-4244-5454-9
  • Type

    conf

  • DOI
    10.1109/VLSIC.2010.5560287
  • Filename
    5560287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1861852