Study of mutual and self-thermal resistance in 90nm SiGe HBTs

Author

Jain, Vinesh ; Zetterlund, B. ; Peng Cheng ; Camillo-Castillo, R.A. ; Pekarik, John J. ; Adkisson, J.W. ; Qizhi Liu ; Gray, P.B. ; Kaushal, V. ; Kessler, T. ; Harame, D.

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

17

Lastpage

20

Abstract

Impact of mutual thermal coupling on the performance of a single 90nm SiGe heterojunction bipolar transistor (HBT) due to the presence of power dissipating elements like other HBTs in near vicinity is presented in this paper. Mutual thermal resistance (R_th,mutual) has been computed as a function of spacing between the single HBT and a ring of HBTs surrounding the device. HBT structural design variations including device layout schemes, metal wire stack connected to the emitter, deep trench (DT) depth and emitter to DT spacing, for reduced self thermal resistance (R_th), have been explored in this paper. An updated thermal resistance model accounting for the heat flow through the metal wiring stack connected to the emitter is also reported.

Keywords

Ge-Si alloys; heat transfer; heterojunction bipolar transistors; integrated circuit interconnections; semiconductor device models; thermal management (packaging); thermal resistance; DT depth; HBT; SiGe; deep trench depth; device layout schemes; heat flow; heterojunction bipolar transistor; metal wire stack; mutual thermal coupling; mutual thermal resistance; power dissipating elements; self-thermal resistance; size 90 nm; thermal resistance model; Abstracts; Digital video broadcasting; Irrigation; Resistance; Resistance heating; Wires; BiCMOS; HBT; SiGe; mutual thermal resistance; self-heating; thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798134

Filename

6798134