A scalable model for temperature dependent thermal resistance of SiGe HBTs

Author

Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Weiss, Michael ; Maneux, Cristell ; Zimmer, T.

Author_Institution

Lab. IMS, Univ. de Bordeaux 1, Talence, France

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

29

Lastpage

32

Abstract

This paper presents a geometry scalable approach for temperature dependent thermal resistance (R_TH) calculations in trench-isolated SiGe heterojunction bipolar transistors (HBTs). The model is able to predict the RTH at any temperature and power dissipation (P_diss). The temperature dependency is obtained by discretizing the heat flow region into n-number of elementary slices depending on the temperature gradient. RTHs of each slice are calculated using temperature dependent thermal conductivity. The results are compared to 3D thermal TCAD simulations for a wide range of ambient temperature (T_amb), P_diss and device dimensions. Finally, the scalability is validated through measurements of several transistor geometries as well as two different technologies and found to be in good agreement.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; thermal conductivity; thermal resistance; 3D thermal TCAD simulations; HBTs; SiGe; ambient temperature; device dimensions; elementary slices; geometry scalable approach; heat flow region; power dissipation; temperature dependent thermal conductivity; temperature dependent thermal resistance; temperature gradient; transistor geometry; trench-isolated heterojunction bipolar transistors; Analytical models; Geometry; Heating; Temperature dependence; Temperature measurement; Thermal resistance; Transistors; Electrothermal effects; Heterojunction Bipolar Transistors; Numerical simulation; Semiconductor device measurements; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798137

Filename

6798137