DocumentCode
1862548
Title
Comparison of IGBTs and HF-GTOs with respect to high frequency inverter applications
Author
Bober, G. ; Heumann, K.
Author_Institution
Inst. fur Allgemeine Elektrotech., Tech. Univ., Berlin, Germany
fYear
1991
fDate
24-27 Jun 1991
Firstpage
551
Lastpage
556
Abstract
IGBTs and high-frequency (HF) GTO thyristors are investigated for applications in fast switching PWM inverters. Device ratings are 1200 V/300 A and 1000 V/300 A for the IGBTs and 1600 V/600 A for the HF-GTOs. Subjects of the comparison are the gate-drive requirements, conduction and switching losses, switching speed, and overload capability
Keywords
insulated gate bipolar transistors; invertors; pulse width modulation; switching; thyristor applications; 1000 V; 1200 V; 1600 V; 300 A; 600 A; GTO thyristors; HF-GTOs; IGBTs; conduction losses; fast switching PWM inverters; gate-drive requirements; overload capability; switching losses; switching speed; Diodes; Frequency conversion; Insulated gate bipolar transistors; Pulse width modulation inverters; Switching loss; Tail; Temperature; Thermal resistance; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location
Cambridge, MA
Print_ISBN
0-7803-0090-4
Type
conf
DOI
10.1109/PESC.1991.162728
Filename
162728
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