• DocumentCode
    1863044
  • Title

    Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide

  • Author

    Kim, Deok Yeol ; Jung, Jin Hyuk ; Jang, Jin

  • Author_Institution
    Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH4), hydrogen (H2), and nitrous oxide (N2O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH4 to N2O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >;17 %.
  • Keywords
    annealing; hydrogen; nitrogen compounds; passivation; plasma CVD; silicon compounds; solar cells; H2; N2O; SiH4; amorphous silicon oxide film; annealing time; heterojunction solar cells; nitrous oxide; passivation effect; plasma-enhanced chemical vapor deposition; power conversion efficiency; silane; Annealing; Films; Heterojunctions; Passivation; Photovoltaic cells; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186235
  • Filename
    6186235
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1863044