• DocumentCode
    1863054
  • Title

    Electron effective mass of Ga0.7In0.3NxAs1-x

  • Author

    Kondow, M. ; Fujisaki, S. ; Kitatani, T. ; Shirakata, S. ; Ikari, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    84
  • Lastpage
    89
  • Abstract
    The electron effective mass of GaInNAs is an important parameter for designing excellent long-wavelength lasers on GaAs. However, it has not yet been established. We find that it is 0.08±0.1 m0 (m0: mass of free electron) almost independent of nitrogen content from 0.3 to 1.5%.
  • Keywords
    III-V semiconductors; effective mass; gallium compounds; indium compounds; nitrogen compounds; radiative lifetimes; semiconductor quantum wells; Ga0.7In0.3NxAs1-x; GaInNAs-GaAs; electron effective mass; long-wavelength lasers; nitrogen content; Effective mass; Energy measurement; Free electron lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Optical scattering; Plasma temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
  • Print_ISBN
    0-7803-8614-0
  • Type

    conf

  • DOI
    10.1109/ISCSPC.2003.1354436
  • Filename
    1354436
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1863054