Magnetic anisotropy of ultrathin epitaxial Fe films on As-terminated GaAs(001)-(2×1) surfaces

Author

Herfort, J. ; Schönherr, H. -P ; Muduli, P.K. ; Ploog, K.H.

Author_Institution

Paul-Drude-Inst. fur Festkorperelektronik, Berlin, Germany

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

96

Lastpage

101

Abstract

We quantitatively study the in-plane uniaxial magnetic anisotropy of ultrathin Fe films epitaxially grown on As-terminated GaAs(001)-(2×1) surfaces in dependence of the film thickness and temperature. It is found that the effective anisotropy constant of the in-plane uniaxial magnetic interface anisotropy first increases with reducing the thickness of the Fe film and then drops to zero. The strength of the in-plane uniaxial magnetic anisotropy is very large with anisotropy fields up to 3 kOe and amounts to 0.2 erg/cm² at T =10 K.

Keywords

ferromagnetic materials; interface magnetism; iron; magnetic anisotropy; magnetic epitaxial layers; metallic epitaxial layers; 10 K; As-terminated GaAs surfaces; Fe-GaAs; GaAs; anisotropy constant; inplane uniaxial magnetic anisotropy; ultrathin epitaxial Fe films; Anisotropic magnetoresistance; Gallium arsenide; Iron; Magnetic anisotropy; Magnetic films; Magnetic properties; Magnetoelectronics; Perpendicular magnetic anisotropy; Saturation magnetization; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354438

Filename

1354438