DocumentCode
1863229
Title
Frequency and breakdown properties of AlGaN/GaN HEMTs
Author
Vertiatchikh, A. ; Schaff, W.J. ; Eastman, L.F. ; Matulionis, A.
Author_Institution
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
132
Lastpage
137
Abstract
AlGaN/GaN heterostructure transistors show potential in high frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.
Keywords
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; AlGaN-GaN; HEMT; RF output power; breakdown properties; breakdown voltages; drain voltage; electron saturation velocities; frequency properties; heterostructure transistors; high-power applications; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Electrons; Gallium nitride; HEMTs; MODFETs; Optical modulation; Phonons; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN
0-7803-8614-0
Type
conf
DOI
10.1109/ISCSPC.2003.1354444
Filename
1354444
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