High-performance InGaP power HBT technologies for wireless applications

Author

Oka, T. ; Fujita, K. ; Shirakawa, K. ; Takahashi, N. ; Liu, Y. ; Yamashita, M. ; Kawamura, H. ; Hasegawa, M. ; Koh, H. ; Kagoshima, K. ; Kijima, H. ; Sakuno, K.

Author_Institution

Devices Technol. Res. Lab., Sharp Corp., Nara, Japan

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

144

Lastpage

151

Abstract

Technological features of InGaP power HBTs for 5 GHz wireless-LAN applications are described. These features include self-aligned device structure, small-sized via-holes located adjacent to each transistor finger, and bias and feedback circuits for the reduction of distortion. These technologies improve both the gain and the linearity of power HBTs, producing high linearity and high power added efficiency in power amplifier MMIC.

Keywords

III-V semiconductors; MMIC power amplifiers; circuit feedback; distortion; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; reviews; wireless LAN; 5 GHz; HBT gain; HBT linearity; InGaP; MMIC; bias circuit; distortion reduction; feedback circuit; power HBT technologies; power amplifier; self-aligned device structure; transistor finger; wireless-LAN applications; Current density; Electrodes; Feedback circuits; Fingers; Heterojunction bipolar transistors; High power amplifiers; Linearity; Low voltage; MMICs; Operational amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354446

Filename

1354446