Electron and proton irradiation effects on substrate-type amorphous silicon solar cells

The electrical performances of single-junction hydrogenated amorphous silicon solar cells are investigated following high energy electron and proton irradiation under controlled temperature conditions of 298 and 331 K. Thermal recoveries after irradiation are also studied. As a result, superior radiation tolerance of a-Si:H solar cells compared to crystalline silicon space solar cells is demonstrated. Also, it is clearly shown that the radiation degradation of all the cell parameters; short-circuit current, open-circuit voltage and fill factor are strongly dependent on temperature during irradiation. The thermal recovery after irradiation is observed even at room temperature. These results indicate that the temperature and the elapsed time after irradiation strongly affect the measured performance degradation of a-Si:H solar cells. Therefore, these features must be taken into account and ground radiation tests for making end-of-life predictions should be carried out under the conditions expected on a mission.