Polycrystalline silicon carbide NEMS for high-temperature logic

We report the first ever silicon carbide (SiC) nano-electro-mechanical systems (NEMS) switches capable of operation from 25 to 600degC. We have developed both laterally- and vertically-actuated designs with threshold voltages of less than 5 V. Switches have been verified to cycle more than 3 billion times at room temperature and more than 2 million times at 600degC. Plausible models to describe the contact resistance in two actuation voltage regimes are also suggested: (i) at low actuation voltage, the resistance is dominated by the native oxide which forms on the SiC surface; and (ii) at higher actuation voltages, the resistance can be described by Sharvin´s model.