100 mW fundamental mode laser for 730 nm wavelength based on tensile-strained GaAsP-AlGaAs quantum well structures

Summary form only given. Applications in medicine and spectroscopy require fundamental mode lasers with a wavelength between 700 nm and 750 nm. At wavelengths shorter than 780 nm, however, the performance of conventional AlGaAs lasers deteriorates due to the high Al-content in the active layer. However, laser structures with Al-free tensile-strained GaAsP-QWs show excellent results in the wavelength region between 790 nm and 715 nm. We demonstrate for the first time fundamental mode lasers on the basis of a GaAsP/AlGaAs epitaxial structure, confirming the superior properties of tensile-strained GaAsP QWs.