Low noise hybrid amplifier using AlGaN/GaN power HEMT devices

Author

Welch, R. ; Jenkins, T. ; Neidhard, B. ; Kehias, L. ; Quach, T. ; Watson, P. ; Worley, R. ; Barsky, M. ; Sandhu, R. ; Wojtowicz, M.

Author_Institution

Air Force Res. Lab, Wright-Patterson AFB, OH, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

153

Lastpage

155

Abstract

This work reports on efforts to demonstrate AlGaN/GaN Low Noise Amplifiers (LNAs) in epitaxial material designed to build power transistors. The hybrid LNA circuit produced a noise figure of 3 dB, a gain of 8.5 dB, an input return loss of -6.5 dB and an output return loss of -9 dB at 4 GHz. Further, devices in an enhanced process have improved noise characteristics and more realizable match conditions. These device enhancements will enable robust X-band LNA demonstrations.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; hybrid integrated circuits; integrated circuit noise; microwave field effect transistors; microwave integrated circuits; microwave power amplifiers; microwave power transistors; power HEMT; wide band gap semiconductors; -6.5 dB; -9 dB; 3 dB; 4 GHz; 8.5 dB; Al/sub 2/O/sub 3/; AlGaN-GaN; AlGaN/GaN power HEMT devices; X-band LNA; epitaxial material; hybrid LNA circuit; low noise hybrid amplifier; match conditions; noise characteristics; power GaN technology; power transistors; sapphire substrate; Aluminum gallium nitride; Circuit noise; Gallium nitride; HEMTs; Low-noise amplifiers; Microwave devices; Microwave technology; Noise robustness; Protection; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964367

Filename

964367