Ohmic contacts on n-type polycrystalline silicon carbide with Ti/TaSi2/Pt

Author

Jin, S. ; Fu, X.A. ; Mehregany, M.

Author_Institution

Mater. Sci. & Eng., Case Western Reserve Univ., Cleveland, OH, USA

fYear

2009

fDate

21-25 June 2009

Firstpage

1083

Lastpage

1086

Abstract

We report a thermodynamically-stable Ti/TaSi₂/Pt Ohmic contact on n-type, heavily-nitrogen-doped low-pressure chemical vapor deposited polycrystalline 3C-silicon carbide; this Ohmic contact metallization is suitable for stable high temperature operation. The contact shows excellent linearity and has a specific contact resistance (SCR) as low as 2times10^-5 Omega-cm₂, directly after sequential sputtering of 100 nm of Ti, 400 nm of TaSi₂ and 200 nm of Pt. The SCR of the metallization following a 20-mins anneal in nitrogen ambient at 600degC decreases to 3.9times10^-6 Omega-cm₂. The contact remains Ohmic throughout 1000 hours of aging in air at 550degC. Auger electron spectroscopy has been used to analyze the metal/semiconductor interface to understand the prevailing reactions in this metal-semiconductor contact.

Keywords

Auger electron spectra; annealing; chemical vapour deposition; contact resistance; metallisation; nitrogen; ohmic contacts; platinum; semiconductor-metal boundaries; silicon alloys; silicon compounds; tantalum alloys; titanium; Auger electron spectroscopy; Ti-TaSi₂-Pt-SiC:N; aging; air; annealing; heavily nitrogen doped polycrystalline 3C-silicon carbide; low-pressure chemical vapor deposition; metal-semiconductor contact; metal-semiconductor interface; n-type polycrystalline silicon carbide; ohmic contact metallization; sequential sputtering; size 100 nm to 400 nm; specific contact resistance; temperature 550 degC to 600 degC; thermodynamically-stable ohmic contact; time 20 min; Annealing; Chemicals; Contact resistance; Linearity; Metallization; Ohmic contacts; Silicon carbide; Sputtering; Temperature; Thyristors; Ohmic contact; platinum; silicon carbide; tantalum silicide; titanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285947

Filename

5285947