Structural asymmetry effects in the optical gain of indium gallium nitride quantum wells

Author

Peng, L.-H. ; Hsu, Y.-C. ; Chuang, C.-W.

Author_Institution

Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1999

fDate

28-28 May 1999

Firstpage

201

Abstract

Summary form only given. Our study indicates a gain competition process between the piezoelectric and many body effects are responsible for the spectral blue shift as the carrier injection increases. When operated over the transparency regime, it is found the structural asymmetry in a 3.0 nm GaN-InGaN-AlGaN QW results in a 35% enhancement of the TE-polarized optical gain compared with the symmetric InGaN-AlGaN QW case.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; semiconductor quantum wells; spectral line shift; symmetry; transparency; 3 nm; GaN-InGaN-AlGaN; GaN-InGaN-AlGaN QW; InGaN-AlGaN; TE-polarized optical gain; carrier injection increase; gain competition process; indium gallium nitride quantum wells; many body effects; optical gain; piezoelectric effects; structural asymmetry; structural asymmetry effects; symmetric InGaN-AlGaN QW case; transparency regime; Aluminum gallium nitride; Epitaxial growth; Gallium nitride; III-V semiconductor materials; Indium; Optical design; Optical devices; Optical pulses; Photonic band gap; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834081

Filename

834081