Low-K/Cu CMOS logic based SoC technology for 10 Gb transceiver with 115 GHz f/sub T/, 80 GHz f/sub MAX/ RF CMOS, high-Q MiM capacitor and spiral Cu inductor

Author

Guo, J.C. ; Lien, W.Y. ; Hung, M.C. ; Liu, C.C. ; Chen, C.W. ; Wu, C.M. ; Sun, Y.C. ; Ping Yang

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

fYear

2003

fDate

10-12 June 2003

Firstpage

39

Lastpage

40

Abstract

For the first time, foundry CMOS logic based RF technology is introduced for 10 Gb/s transceiver in which active and passive RF elements have been realized in a single chip. Superior RF CMOS of 115 GHz f/sub r/, 80 GHz f/sub MAX/, and 2.2 dB NF/sub min/ at 10 GHz has been fabricated by aggressive device scaling and layout optimization. High Q MiM capacitor and spiral Cu inductor have been successfully implemented in the same chip by 0.13 /spl mu/m low-K/Cu BEOL technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost but realized by elaborated layout. Triple well is introduced to provide superior substrate noise isolation by >10 dB suppression at 10 GHz and beyond.

Keywords

CMOS logic circuits; MIM devices; copper; inductors; silicon-on-insulator; transceivers; varactors; voltage-controlled oscillators; 0.13 micron; 1.0 V; 10 GHz; 115 GHz; 80 GHz; Cu; Cu BEOL technology; Cu CMOS logic circuit; RF CMOS; RF technology; SoC technology; VCO; high-Q MiM capacitor; junction varactors; noise isolation; passive RF elements; spiral Cu inductor; transceiver; CMOS logic circuits; CMOS technology; Foundries; Inductors; Isolation technology; MIM capacitors; Noise measurement; Radio frequency; Spirals; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-89114-033-X

Type

conf

DOI

10.1109/VLSIT.2003.1221075

Filename

1221075