• DocumentCode
    1866544
  • Title

    Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate

  • Author

    Kim, JinSung ; Moon, Kyungwon ; Shin, Kyu-Sang ; Jung, Myeong-Il ; Choi, Chel-Jong

  • Author_Institution
    Dept. of BIN Fusion Technol., Chonbuk Nat. Univ., Jeonju, South Korea
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.
  • Keywords
    annealing; elemental semiconductors; semiconductor diodes; silicon; solar cells; P-Si; Si; current-voltage characteristic investigation; diode annealing; flow rate increase; furnace annealing; n+ emitter junction; n+-p junction solar cell emitter; phosphorus diffusion paste; rectifying behavior; Annealing; Argon; Junctions; Photovoltaic cells; Semiconductor diodes; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186384
  • Filename
    6186384
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1866544