DocumentCode
1866669
Title
Improvement of threshold voltage roll-off by ultra-shallow junction formed by flash lamp annealing
Author
Ito, T. ; Suguro, K. ; Itani, T. ; Nishinohara, K. ; Matsuo, K. ; Saito, T.
Author_Institution
Process & Manuf. Eng. Center, Toshiba Corp., Yokohama, Japan
fYear
2003
fDate
10-12 June 2003
Firstpage
53
Lastpage
54
Abstract
Flash lamp annealing (FLA) was first applied to complementary MOSFETs (CMOS) as a new method of activating implanted impurities in source and drain. By optimizing ion implantation and activation annealing conditions, junction depth less than 10 nm with good junction leakage were successfully obtained for both p/sup +//n and n/sup +//p junctions. Threshold voltage (V/sub th/) roll-off characteristics for MOSFETs fabricated by FLA show drastic improvement as compared with conventional spike annealing.
Keywords
MOSFET; incoherent light annealing; ion implantation; leakage currents; CMOS; MOSFET; drain; flash lamp annealing; implanted impurities; ion implantation; source; threshold voltage roll off; ultra shallow junction; Annealing; CMOS technology; Heating; Indium tin oxide; Lamps; MOSFETs; Semiconductor device manufacture; Surface resistance; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
4-89114-033-X
Type
conf
DOI
10.1109/VLSIT.2003.1221082
Filename
1221082
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