A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories

Author

Paolucci, Giovanni M. ; Monzio Compagnoni, Christian ; Miccoli, Carmine ; Bertuccio, M. ; Beltrami, S. ; Barber, J. ; Kessenich, J. ; Lacaita, Andrea L. ; Spinelli, Alessandro S. ; Visconti, Angelo

Author_Institution

Dipt. di Elettron., Inf. e Bioingegneria, Inf. e Bioingegneria, Vinci, Italy

fYear

2014

fDate

1-5 June 2014

Abstract

We present a semi-analytical model for the description of charge trapping and detrapping phenomena occurring during cycling and idle periods in NAND Flash memories. The model is based on a statistical distribution of detrapping time constants that is affected by the composition of cycles and idle periods and accounts for charge discreteness, statistical charge capture and emission and statistical distribution of the threshold-voltage shift due to single detrapping events. The model can reproduce the experimental data under different conditions and allows to develop and monitor accelerated schemes able to mimic realistic on-field usage of the memory device.

Keywords

NAND circuits; flash memories; integrated circuit modelling; , statistical charge capture; NAND Flash memories; charge discreteness; charge trapping-detrapping modeling; cycling period; detrapping time constant; idle period; semianalytical model; single-detrapping events; spectral approach; statistical charge emission; statistical distribution; threshold-voltage shift; Electron traps; Flash memories; program/erase cycling; semiconductor device modeling; semiconductor device reliability;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 2014 IEEE International

Conference_Location

Waikoloa, HI

Type

conf

DOI

10.1109/IRPS.2014.6860600

Filename

6860600