• DocumentCode
    186710
  • Title

    Universality of NBTI - From devices to circuits and products

  • Author

    Mahapatra, Santanu ; Huard, Vincent ; Kerber, Andreas ; Reddy, Veerababu ; Kalpat, S. ; Haggag, A.

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai, India
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    This paper showcases the universality of NBTI and its dependencies on time, bias, temperature, AC frequency and pulse duty cycle across different process integration schemes used in the industry and technology nodes. Strong correlation has been established between device, circuit, and product degradation. Different aspects of variability and variable NBTI in small area devices have been discussed. Features that are important from an industrial perspective are highlighted. Any NBTI model should address these aspects to be considered relevant.
  • Keywords
    negative bias temperature instability; AC frequency; NBTI model; NBTI universality; NBTI variability; process integration scheme; product degradation; pulse duty cycle; Correlation; Degradation; Logic gates; Stress; Stress measurement; Time measurement; Time-frequency analysis; Fmax degradation; NBTI; RO degradation; SRAM Vmin shift; trap generation; variable BTI;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860615
  • Filename
    6860615